IndiumV3, Main, Repository, bibRecord, 002547

Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

Identifieur interne : 002547 ( Main/Repository ); précédent : 002546; suivant : 002548

Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

Auteurs : RBID : Pascal:11-0330592

Descripteurs français

Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Mécanisme croissance, Nucléation, Réseau(arrangement), Largeur raie, Diode couche intrinsèque, Electroluminescence, Nanostructure, Arséniure d'indium, Arséniure de gallium, GaAs, 8105E, 8107T, 8535B, 8107B.

English descriptors

KwdEn :
- Arrays, Electroluminescence, Gallium arsenides, Growth mechanism, III-V compound, III-V semiconductors, Indium arsenides, Line widths, Nanostructured materials, Nanostructures, Nucleation, Quantum dots, p i n diodes.

Abstract

We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 °C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 μm period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p-i-n diode and observe electroluminescence of a single SCQD with a linewidth of 400 μeV.

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Pascal:11-0330592

Le document en format XML

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<front><div type="abstract" xml:lang="en">We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 °C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 μm period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p-i-n diode and observe electroluminescence of a single SCQD with a linewidth of 400 μeV.</div>
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<fC03 i1="17" i2="3" l="FRE"><s0>8535B</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>227</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1>
<s2>16</s2>
<s3>Berlin DEU</s3>
<s4>2010-08-22</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices
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Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

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